Product Descriptions
The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
Product Features
? PG = 14.5 dB min. at 220 W/30 MHz
? IMD = -30 dB max.
? Omnigold? Metalization System
Specifications
| Attribute | Attribute value |
| Product name | ANSM-TH430D |
| Product Category: | RF Bipolar Transistors |
| Transistor Type: | Bipolar Power |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Operating Frequency: | 30 MHz |
| DC Collector/Base Gain hfe Min: | 15 |
| Collector- Emitter Voltage VCEO Max: | 55 V |
| Emitter- Base Voltage VEBO: | 4 V |
| Continuous Collector Current: | 40 A |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 200 C |
| Mounting Style: | Screw Mount |
| Package / Case: | M177 |
| Packaging: | Tray |
| Pd - Power Dissipation: | 330 W |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Type: | RF Bipolar Power |
| Unit Weight: | 0.723969 oz |
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