Product Descriptions
2N6661 is an enhancement-mode (normally-off) tran-sistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-bination produces a device with the power-handlingcapabilities of bipolar transistors, and the high inputimpedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway andthermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where very-low threshold voltage, high breakdown voltage, high-input impedance, low-input capacitance, and fastswitching speeds are desired.
Product Features
? Free from secondary breakdown
? Low power drive requirement
? Ease of paralleling
? Low Css and fast switching speeds
? Excellent thermal stability
? Integral source-drain diode
? High input impedance and high gain
Product Applications
? Motor controls
? Converters
? Amplifiers
? Switches
? Power supply circuits
? Drivers: relays, hammers, solenoids, lampsmemories, displays, bipolar transistors, etc.
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-2N6661 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | - |
| Series | - |
| Package | Bag |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 90 V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 24 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
Actual product photos

Product Data Book:





For more product information, please download the PDF
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